schottky barrier diode rb160l-90 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1)small power mold type. pmds 2) low i r. 3)high reliability ? construction silicon epitaxial planer ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj ? c tstg ? c ? electrical characteristic (ta=25c) symbol min. typ. max. unit forward voltage v f - - 0.73 v i f =1.0a i r - - 100 a v r =90v reverse current conditions storage temperature ? 40 to ? 150 (*1)mounting on epoxy board. 180half sine wave parameter forward current surge peak (60hz ?1cyc) 30 junction temperature 150 reverse voltage (dc) 90 average rectified forward current 1 parameter limits reverse voltage (repetitive) 95 pmds 2.0 4.2 2.0 rohm : pmds jedec : sod-106 manufacture date 6 4 0.10.02 0.1 2.60.2 2.00.2 5.00.3 1.20.3 4.50.2 1.50.2 4.00.1 2.90.1 4.00.1 2.00.05 1.550.05 5.50.05 1.750.1 120.2 1.55 9.50.1 0.3 5.30.1 0.05 2.8max 1/3 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb160l-90 0 50 100 150 200 ave:56.0a 8.3ms ifsm 1cyc 0 5 10 15 20 25 30 ave:7.40ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs 0 50 100 150 1 10 100 t ifsm 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=10ma if=0.5a 300us time forward voltagevf(mv) vf-if characteristics forward current:if(a) reverse current:ir(ua) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(ua) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) ta=25 vr=100v n=30pcs ave:478.3na :36.1612na 0.001 0.01 0.1 1 0 100 200 300 400 500 600 700 ta=-25 ta=125 ta=75 ta=25 ta=150 0.01 0.1 1 10 100 1000 10000 0 102030405060708090 ta=125 ta=75 ta=25 ta=-25 ta=150 100 110 120 130 140 150 160 170 180 190 200 ave:149.6pf ta=25 f=1mhz vr=0v n=10pcs 1 10 100 1000 0 5 10 15 20 25 30 f=1mhz 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=90v n=30pcs ave:4.655ua 600 610 620 630 640 650 ave:632.1mv ta=25 if=1a n=30pcs 0 50 100 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 1 2 012 sin( ?180) dc d=1/2 2/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb160l-90 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.2 0.4 0.6 0.8 1 0 102030405060708090 sin(?180) dc d=1/2 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 sin(?180) dc d=1/2 t tj=150 d=t/t t vr io vr=45v 0a 0v 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 sin(?180) dc d=1/2 t tj=150 d=t/t t vr io vr=45v 0a 0v 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:1.70kv ave:10.7kv electrostatic discharge test esd(kv) esd dispersion map 3/3 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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